In modern microelectronics, interconnects are used for transmission and distribution of electronic signals. Consequently, the function and use of a microelectronic device are directly related to fabrication and properties of interconnect materials and structures. The Division of Microelectronic Interconnect Materials is focused on establishing materials science basis for development of new materials and fabrication processes in advanced high density interconnect structures. Because of the unique function of the interconnect and its surrounding environment, interconnect materials must have well-defined electrical, thermal, mechanical and chemical properties. With increasing interconnect density, these properties are often limited by the constraints in fabrication and structural considerations. At the same time, the ratio of the interface to the volume of the interconnect material increases rapidly so that physical, chemical, and mechanical characteristics of the interface become dominant factors in determining the performance of an interconnect structure. Our work seeks to establish the scientific basis for design and fabrication of advanced high density interconnects by systematically investigating the relationship of the electrical, thermal, mechanical, and chemical properties to fabrication process and structure of interconnect materials and interfaces.
Research Groups
Microprocess Electrical and Thermal Interfaces (Leader: Dr. Jin-dong GUO)
In-situ Probe of microelectronic Structures and Functions(Leader: Dr. Zhi-quan LIU)
Structures and Properties of Microelectronic Interfaces (Leader: Prof. Jian-ku SHANG)
Research Areas
Basic properties of Sn and Sn-base alloys.
Structure and properties of solder interfaces.
Current-induced polarity effect in solder interconnects.
Structure and properties of reactive wetting interfaces.