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Nanoscale domain engineering in ferroelectric multilayers

信息来源:固体原子像研究部        更新时间:2017/3/17


题目:Nanoscale domain engineering in ferroelectric multilayers

报告人:Nagarajan Valanoor

          School of Materials Science and Engineering, 
          University of New South Wales, Sydney, Australia

地点:李薰楼468室

时间:2017年3月21日(周二)下午15:00

The nanoscale domain engineering of ferroelectric multilayer thin films is presented. We present direct evidence for complex underpinning factors that result in novel domain topologies, polarization rotation and ferroelastic domain switching using a combination of piezoresponse force microscopy, atomic-level aberration corrected scanning transmission electron microscopy and phase-field simulations in model epitaxial (001) tetragonal (T) PbZrxTi1-xO3 (PZT) based heterostructures. Theoretical simulations show this is due to the minimization of the excessive elastic and electrostatic energies, as a consequence of the interface effects. This ability to achieve engineered polarization switching, either through rotation or domain wall motion will allow researchers to better “craft” such multilayered ferroelectric systems with precisely tailored domain wall functionality and enhanced sensitivity, which can be exploited for the next generation of integrated piezoelectric technologies. This research is supported by funding from the Australian Research Council Discovery Project.

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